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Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3
35 V Memory ranking 4 ECC Yes Memory clock speed 1066 MHz Internal memory type DDR3L Features Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 240-pin DIMM Memory voltage 1
Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 204-pin SO-DIMM Memory ranking 1 ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 204-pin SO-DIMM Memory ranking 1 ECC No Memory clock speed 1333 MHz Internal memory type DDR3
Load-Reduced ECC DDR4 SDRAM - LRDIMM 288-pin 2400 MHz ( PC4-19200 ) from Hypertec NOTE: This memory meets the memory specification requirements for reliable operation within a HP Generation 8 (or 9)
35 V Memory ranking 2 ECC Yes Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 2 x 8 GB Internal memory 16 GB Memory form factor 240-pin DIMM Memory voltage 1
Hypertec 41Y2768-HY (Legacy) memory module 8 GB 2 x 4 GB DDR2 667 MHz ECC DDR2 Memory Buffered memory type UnregisteredA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to
