MG200Q2YS51-TOSHIBA First 50 Housed in a dual (half-bridge

Housed in a dual (half-bridge capable) configuration

Quick Reference: 6MBI25L-120

Dual IGBT configuration with integrated freewheeling diodes reduces external component count and PCB footprint

Part Number 2MBI300S-120 Manufacturer Fuji Electric Type IGBT Module Configuration Dual Current Rating 300A Voltage Rating 1200V Availability In Stock — Same-Day Shipping Condition New OEM Key Features of the 2MBI300S-120:

Center tap diode configuration simplifies circuit design for rectifier and freewheeling applications

MG200Q2YS51-TOSHIBA First 50 Housed in a dual (half-bridgeThe Toshiba MG200Q2YS51 is a high current IGBT power module engineered for use in high frequency switching topologies where thermal reliability and consistent gate drive response are critical. Rated at 200A, this module is constructed to Toshiba's established quality benchmarks and is well suited for integration into variable frequency drives, industrial inverters, and medium to large servo amplifier platforms. Its robust internal layout supports low